Product Name: Monocrystalline Solar Wafers

Catalogue No.: SI-001

Method: Monocrystalline Silicon

Growth Method: CZType: P (Boron)

Orientation: <1-0-0> +/ - 3 deg

Resistivity: 0.5 – 3.0 Ohm.cm (1 Ohm.cm typical)

Lifetime: ≥1-10 microseconds

Dislocation Density: <. 3000 cm2

Carbon Content: <. 5 x 1016 atoms/cm3

Oxygen Content: <. 10 x 1018 atoms/cm3

Apprance: No chip No nick

Volume: without internal stress

Dimensions: 125.0 x 125.0 +/- 0.5 mm

Diagonal: 150 mm +/- 0.5 mmT

hickness: 200 +/- 20 microns

TTV: <. 50 microns

Packing: Polystyrol boxes